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Modulating the Electronic Properties of Au-MoS2 Interfaces Using Functionalized Self-Assembled Monolayers
Jenny K Hedlund1, Amy V Walker1,2
1Department of Chemistry and Biochemistry , University of Texas at Dallas , 800 W. Campbell Rd, BSB13 , Richardson , Texas 75080 , United States.
Langmuir : the ACS Journal of Surfaces and Colloids
|January 8, 2020
Summary
Researchers modified gold-molybdenum disulfide (MoS2) contacts using self-assembled monolayers (SAMs). This functionalization tunes electronic properties, enabling site-selective deposition for patterned MoS2 films in electronics.
Area of Science:
- Materials Science
- Surface Chemistry
- Nanotechnology
Background:
- Molybdenum disulfide (MoS2), a transition-metal dichalcogenide, is crucial for electronic devices and sensors.
- High contact resistance between metal electrodes and MoS2 layers hinders device performance.
- Functionalized alkanethiolate self-assembled monolayers (SAMs) offer a route to modify interfacial properties.
Purpose of the Study:
- To investigate the modification of gold-molybdenum disulfide (Au-MoS2) contact properties.
- To understand how functionalized SAMs influence the electronic characteristics of the Au-MoS2 interface.
- To demonstrate site-selective deposition of MoS2 using patterned SAMs.
Main Methods:
- Utilized Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) to analyze interfacial modifications.
- Employed functionalized alkanethiolate SAMs with varying terminal groups (-CH3, -CO2C6F5, -OH, -COOH).
- Investigated the interaction between both 2H and 1T phases of MoS2 with the gold substrate.
Main Results:
- Confirmed strong interactions between both 2H and 1T MoS2 phases and the gold substrate.
- Demonstrated that the dipole moment of the alkanethiolate SAMs effectively mediates the interface's electronic properties.
- Achieved site-selective deposition of 2H and 1T MoS2 on micropatterned SAMs.
Conclusions:
- Functionalized SAMs are effective in tuning the electronic properties of Au-MoS2 contacts.
- The dipole moment of SAMs plays a critical role in mediating interfacial electronic behavior.
- This approach enables the fabrication of patterned MoS2 films with distinct conducting and semiconducting regions.

