Modulating the Electronic Properties of Au-MoS₂ Interfaces Using Functionalized Self-Assembled Monolayers

Molybdenum disulfide (MoS₂) is a transition-metal dichalcogenide with many applications including in electronic devices and sensors. A critical issue in the development of these devices is the high resistance between the metal contact and the molybdenum disulfide layer. In this study, we employ Raman spectroscopy and X-ray photoelectron spectroscopy to investigate the modification of Au-MoS₂ contact properties using functionalized alkanethiolate self-assembled monolayers (SAMs). We demonstrate that both 2H and 1T MoS₂ strongly interact with the underlying Au substrate. The electronic properties of the interface are mediated by the dipole moment of the alkanethiolate SAM, which have a -CH₃, -CO₂C₆F₅, -OH, or -COOH terminal group. Finally, we demonstrate the site-selective deposition of 2H and 1T MoS₂ on micropatterned SAMs to form conducting-semiconducting patterned MoS₂ films.