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Infrared Interlayer Exciton Emission in MoS_{2}/WSe_{2} Heterostructures.

Ouri Karni1, Elyse Barré2, Sze Cheung Lau1

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|January 11, 2020
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We observed light emission from layered molybdenum disulfide (MoS_{2}) and tungsten diselenide (WSe_{2}) materials. This emission originates from interlayer excitons (ILXs) with potential applications in silicon photonics.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Transition metal dichalcogenide (TMD) monolayers are promising for optoelectronic applications.
  • Heterostructures of different TMDs offer unique interlayer physics.
  • Understanding interlayer excitons (ILXs) is crucial for novel device functionalities.

Purpose of the Study:

  • To investigate light emission from MoS_{2}/WSe_{2} heterostructures.
  • To identify the origin and properties of the observed emission.
  • To explore the potential of these heterostructures for silicon photonics and optical communication.

Main Methods:

  • Fabrication of MoS_{2}/WSe_{2} transition metal dichalcogenide monolayer heterostructures.
  • Photoluminescence spectroscopy to analyze light emission.
  • Application of out-of-plane electric fields to tune spectral properties.
  • Temperature and twist-angle dependent measurements.
  • Comparison with first-principles electronic structure calculations.

Main Results:

  • Observed light emission centered around 1 eV (1240 nm).
  • Identified the emission as originating from an interlayer exciton (ILX).
  • Demonstrated wide spectral tunability of the ILX under an electric field.
  • Determined the static dipole moment and temperature/twist-angle dependence of the ILX.
  • Assigned the ILX to a fundamental interlayer transition between K valleys.

Conclusions:

  • Gained access to the interlayer physics of incommensurate MoS_{2}/WSe_{2} heterostructures.
  • Revealed moiré and valley pseudospin effects in the system.
  • Highlighted the potential for integration with silicon photonics and optical fiber communication systems operating at >1150 nm.