Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Transmission Electron Microscopy01:15

Transmission Electron Microscopy

6.7K
In 1931, physicist Ernst Ruska—building on the idea that magnetic fields can direct an electron beam just as lenses can direct a beam of light in an optical microscope—developed the first prototype of the electron microscope. This development led to the development of the field of electron microscopy. In the transmission electron microscope (TEM), electrons are produced by a hot tungsten element and accelerated by a potential difference in an electron gun, which gives them up to 400...
6.7K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Ultra-high spatial resolution selected area electron channeling patterns.

Ultramicroscopy·2019
Same author

New levels of high angular resolution EBSD performance via inverse compositional Gauss-Newton based digital image correlation.

Ultramicroscopy·2018
Same author

The effect of length scale on the determination of geometrically necessary dislocations via EBSD continuum dislocation microscopy.

Ultramicroscopy·2016
Same author

Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films.

Nature materials·2016
Same author

Electronic Origins of Anomalous Twin Boundary Energies in Hexagonal Close Packed Transition Metals.

Physical review letters·2015
Same author

Analysis of traction-free assumption in high-resolution EBSD measurements.

Journal of microscopy·2015

Related Experiment Video

Updated: Dec 31, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.3K

Correlating results from high resolution EBSD with TEM- and ECCI-based dislocation microscopy: Approaching single

T J Ruggles1, Y S J Yoo2, B E Dunlap3

  • 1National Institute of Aerospace, Hampton, VA, USA; Sandia National Laboratories, Albuquerque, NM, USA.

Ultramicroscopy
|January 11, 2020
PubMed
Summary

This study introduces a novel method to reduce noise in high-resolution electron backscatter diffraction (HREBSD) measurements for crystalline materials. This technique accurately identifies dislocation types and densities, improving material analysis.

Keywords:
Dislocation microscopyECCIHREBSDTEM

More Related Videos

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.5K
A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.6K

Related Experiment Videos

Last Updated: Dec 31, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.3K
Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.5K
A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.6K

Area of Science:

  • Materials Science
  • Crystallography
  • Electron Microscopy

Background:

  • High-resolution electron backscatter diffraction (HREBSD) is a powerful SEM-based technique for measuring lattice distortion and inferring dislocation content.
  • Image correlation uncertainties in HREBSD introduce measurement noise, leading to inaccurate dislocation identification.

Purpose of the Study:

  • To develop and validate a method for reducing noise in HREBSD dislocation measurements.
  • To improve the accuracy of dislocation type and density determination using HREBSD.

Main Methods:

  • A novel method to remove problematic components of measured distortion in HREBSD data.
  • Validation through comparative analysis with Transmission Electron Microscopy (TEM) and Electron Channeling Contrast Imaging (ECCI).

Main Results:

  • The proposed method effectively reduces noise in HREBSD dislocation measurements.
  • HREBSD successfully resolved individual dislocations and accurately identified Burgers vectors, comparable to TEM and ECCI.

Conclusions:

  • The refined HREBSD technique provides accurate dislocation measurements, overcoming previous noise-related limitations.
  • This advancement enhances the capability of HREBSD for detailed crystallographic defect analysis in materials.