Tailoring of uniaxial magnetic anisotropy in Permalloy thin films using nanorippled Si substrates

In this work the investigation of in-plane uniaxial magnetic anisotropy induced by the morphology due to ion beam erosion of Si(1 0 0) has been done. Ion beam erosion at an oblique angle of incidence generates a well-ordered nanoripple structure on the Si surface and ripple propagates in a direction normal to ion beam erosion. Permalloy thin films grown on such periodic nanopatterns show a strong uniaxial magnetic anisotropy with easy axis of magnetization in a direction normal to the ripple wave vector. The strength of uniaxial magnetic anisotropy is found to be high for the low value of ripple wavelength; it is decreasing with increasing value of ripple wavelength. Similarly, the strength of uniaxial magnetic anisotropy decreases with increasing Permalloy film thickness. Grazing incidence small angle x-ray scattering data reveals an anisotropic growth of Permalloy thin films with preferential orientation of grains in the direction normal to the ripple wave vector. Permalloy thin film growth is highly conformal with the film surface replicating the substrate ripple morphology up to a film thickness of 50 nm has been observed. Correlation between observed uniaxial magnetic anisotropy to surface modification has been addressed.