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Electrical and Thermal Performances of Omega-Shaped-Gate Nanowire Field Effect Transistors for Low Power Operation
Young Suh Song1, Sungmin Hwang1, Kyung Kyu Min1
1Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-742, Republic of Korea.
Abstract:
In this paper, we proposed Omega-Shaped-Gate Nanowire Field Effect Transistor (ONWFET) with different gate coverage ratio (GCR). In order to investigate electrical and self-heating characteristics of the proposed devices, on-current, off-current, subthreshold swing (SS), and operating temperature were examined by using 3D TCAD simulator and compared with nanowire MOSFET (NW-MOSFET). As a result, a possibility of reducing off-current and operating temperature was demonstrated by using the ONWFET with 40% GCR. Therefore, the ONWFET can save power consumption and serve as low power application such as battery-powered portable electronic devices.
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