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Updated: Dec 30, 2025

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Published on: October 23, 2018
Polarization Reversal Characteristics of Ferroelectric-Schottky Diode Hybrid Structure
Muhammad Saqib1, Shenawar Ali Khan1, Sheik Abdur Rahman1
1Department of Electronic Engineering, Jeju National University, Jeju, 63243, Republic of Korea.
Abstract:
The polarization reversal characteristics were measured by fabricating a device with top electrode/n-type semiconductor/ferroelectric/bottom electrode structure. It was observed that the hysteresis curves were changed according to the polarity of the applied voltage. When a positive voltage was applied, depolarization was hardly observed. However, a significant depolarization occurred when a negative voltage was applied. An attempt was made to set up an equivalent circuit using a Schottky diode to model the semiconductor-ferroelectric structure. This study is expected to be useful for setting protocol of electronic device composed of semiconductor-ferroelectric hybrid structure.
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