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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
One-Dimensional Poisson Calculation for Electrically Controlled Band Bending in GaAs/AlGaAs Heterostructure
Hyungkook Choi1, Minsoo Kim2, Ji-Yun Moon3
1Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju-si, Jeollabuk-do 54896, Republic of Korea.
Abstract:
Here, we describe the band-bending situation for introducing electrons in an undoped GaAs and AlGaAs quantum well. Our calculation has shown that an externally applied electric field can modulate two-dimensional electron gas (2DEG) without standard modulation doping. The topic of electrically modulated 2DEG has only background impurities, no intentional dopants, so scattering or dephasing by background potential fluctuations should be much reduced. Using our calculation, it is straightforward to confine carriers (in the range of 1010~1011 cm-2), when the external electric field is more than threshold voltage, 4 V to the surface metal gate.
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