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Improving EBSD precision by orientation refinement with full pattern matching.

A Winkelmann^1,2, B M Jablon^2,3, V S Tong³

¹Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Krakow, Poland.

Journal of Microscopy

|January 31, 2020

Summary

This summary is machine-generated.

High-precision orientation refinement using simulated pattern matching in electron backscatter diffraction (EBSD) offers superior accuracy for imaging microstructures. Postprocessing noisy EBSD data can reduce spatial resolution and introduce artifacts.

Keywords:

Electron backscatter diffraction Kikuchi patterns orientation mapping scanning electron microscopy

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Area of Science:

Materials Science
Crystallography
Electron Microscopy

Background:

Electron Backscatter Diffraction (EBSD) is a key technique for crystallographic orientation mapping in scanning electron microscopy.
Conventional EBSD analysis relies on Hough-transform based methods, which may have limitations in precision.
Understanding and refining orientation data is crucial for characterizing microstructural features like dislocations and subgrains.

Purpose of the Study:

To compare the precision of different orientation imaging approaches using EBSD.
To evaluate the effectiveness of high-precision orientation refinement via simulated pattern matching.
To assess the impact of postprocessing filters on EBSD orientation data.

Main Methods:

Utilized EBSD for orientation imaging of WC grains.
Compared conventional Hough-transform EBSD with high-precision simulated pattern matching at full detector resolution (640 × 480 pixels).
Employed Electron Channeling Contrast Imaging (ECCI) for qualitative verification of orientation data.

Main Results:

Simulated pattern matching achieved a sensitivity of approximately 0.5 mrad (0.03°) and a spatial resolution of ~100 nm.
Postprocessing orientation data with filters can decrease spatial resolution.
Orientation filters may introduce artifacts, especially for features near the resolution limits of EBSD.

Conclusions:

High-precision orientation refinement using simulated pattern matching significantly enhances EBSD accuracy.
Careful consideration of postprocessing techniques is necessary to avoid loss of spatial resolution and artifact introduction in EBSD analysis.
The study provides insights into optimizing EBSD for detailed microstructural characterization.