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Related Concept Videos

Potential Due to a Magnetized Object01:24

Potential Due to a Magnetized Object

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Magnetic dipoles in magnetic materials are aligned when placed under an external magnetic field. For paramagnets and ferromagnets, dipole alignment occurs in the direction of the magnetic field. However, the dipoles align opposite to the field in the case of diamagnets. This state of magnetic polarization due to the external field is called magnetization. Magnetization is defined as the dipole moment per unit volume. It plays a similar role to polarization in electrostatics.
The vector...
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Magnetic Susceptibility and Permeability01:31

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In linear magnetic materials, like paramagnets and diamagnets, magnetization is proportional to the magnetic field intensity. The constant of proportionality, a dimensionless number, is called magnetic susceptibility. The value of the susceptibility depends on the type of material.
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Ferromagnetism01:31

Ferromagnetism

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Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
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Paramagnetism01:30

Paramagnetism

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Paramagnets are materials with unpaired electrons that possess a finite magnetic moment. In the absence of a magnetic field, these moments are randomly oriented, and thus the net moment is zero. Under an external field, a torque acting on the moments tends to align them along the field's direction. However, the random thermal motion of electrons produces a torque opposite to the external field and tries to disorient the moments. These two competing effects align only a few moments along the...
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Diamagnetism01:26

Diamagnetism

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Materials consisting of paired electrons have zero net magnetic moments. However, when these materials are placed under an external magnetic field, the moments opposite to the field are induced. Such materials are called diamagnets. Diamagnetism is the response of the diamagnets when placed in an external magnetic field.
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The number of nuclear spins aligned in the lower energy state is slightly greater than those in the higher energy state. In the presence of an external magnetic field, as the spins precess at the Larmor frequency, the excess population results in a net magnetization oriented along the z axis. When a pulse or a short burst of radio waves at the Larmor frequency is applied along the x axis, the coupling of frequencies causes resonance and flips the nuclear spins of the excess population from the...
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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
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Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111).

T Guillet1, C Zucchetti2, Q Barbedienne3

  • 1Université Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000 Grenoble, France.

Physical Review Letters
|February 1, 2020
PubMed
Summary
This summary is machine-generated.

Researchers discovered a significant unidirectional magnetoresistance (UMR) in germanium films, offering a new way to probe spin-orbit interactions. This effect, observed in Ge(111) on Si(111), is stronger than previously reported UMR effects.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Understanding magnetotransport properties linked to spin textures at surfaces and interfaces is crucial.
  • Epitaxial growth of Germanium (Ge) on Silicon (Si) provides a platform for investigating spin-dependent phenomena.

Purpose of the Study:

  • To investigate the electrical resistance variation of Ge(111) under an external magnetic field.
  • To explore the origin and characteristics of observed magnetoresistance, specifically unidirectional magnetoresistance (UMR).

Main Methods:

  • Epitaxial growth of Ge(111) on semi-insulating Si(111).
  • Measurement of electrical resistance under applied magnetic fields at low temperatures (15 K).
  • Application of varying current densities and magnetic field strengths to quantify magnetoresistance.

Main Results:

  • Observed a magnetoresistance term linear in current density and magnetic field, identified as unidirectional magnetoresistance (UMR).
  • Achieved a significantly higher UMR (0.5% at 15 K, 1 T) compared to previous reports.
  • Demonstrated that UMR vanishes with negative gate voltage or increased temperature, linked to carrier activation and reduced Rashba splitting.

Conclusions:

  • The observed UMR originates from the interplay between the external magnetic field and a pseudomagnetic field in spin-split subsurface states of Ge(111).
  • UMR in this system is independent of current direction relative to crystal axes.
  • UMR shows potential as a sensitive probe for studying spin-orbit interactions across diverse materials.