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Athermal Crystal Defect Dynamics in Si Revealed by Cryo-High-Voltage Electron Microscopy
Kazuhisa Sato1,2, Hidehiro Yasuda1,2
1Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
ACS Omega
|February 4, 2020
Summary
Low-temperature electron irradiation in silicon creates self-interstitial atom defects. These {113} defects exhibit unusual growth and shrinkage, indicating athermal dynamics due to rapid interstitial diffusion.
Area of Science:
- Materials Science
- Solid State Physics
- Radiation Damage
Background:
- Understanding crystal defect dynamics is crucial for semiconductor materials.
- Previous studies suggested different defect behaviors at low temperatures.
Purpose of the Study:
- Investigate low-temperature crystal defect dynamics in silicon.
- Characterize the behavior of planar {113} defects introduced by electron irradiation.
Main Methods:
- Utilized a newly developed cryo-high-voltage electron microscope.
- Introduced self-interstitial atoms via 1 MeV electron irradiation at 94 K.
- Observed defect growth and shrinkage dynamics.
Main Results:
- Planar {113} defects were observed at 94 K with damage exceeding 0.42 displacements per atom (dpa).
- Observed defects exhibited both growth and subsequent shrinkage.
- Nucleation and dissociation dynamics were attributed to an athermal process.
Conclusions:
- Anomalously fast diffusion of self-interstitial atoms at low temperatures drives the observed athermal defect dynamics.
- The findings challenge previous understandings of low-temperature defect behavior in silicon.
- Cryo-electron microscopy enables novel insights into radiation-induced defects.
