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Updated: Dec 29, 2025

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The Effect of Multi-Layer Stacking Sequence of TiOx Active Layers on the Resistive-Switching Characteristics of

Minho Kim1, Kungsang Yoo1, Seong-Pil Jeon2

  • 1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.

Micromachines
|February 6, 2020
PubMed

Keywords:
TiOxmemristorsoxygen vacancyresistive switching behaviourstacking sequence

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