Vacancy-Assisted Selective Detection of Low-ppb Formaldehyde in Two-Dimensional Layered SnS₂

A two-dimensional (2D) layered SnS₂ film synthesized by the thermal-chemical vapor deposition method is utilized for detecting formaldehyde (HCHO), which causes a sick building syndrome. A back-gated field-effect transistor (FET)-based SnS₂ sensor successfully detects HCHO with concentrations down to 1 ppb in a nitrogen atmosphere. Sensing measurements performed under dry air conditions also exhibit a clear response to 20 ppb of HCHO, which is more sensitive than the previously reported sensors based on other 2D-layered materials. Moreover, it is found that the sensor possesses a high selectivity for HCHO over other organic species. Theoretical calculations suggest that native sulfur vacancies existing in n-type SnS₂ crystals play an important role in HCHO detection. Actually, oxygen atoms that are unexpectedly detached from HCHO molecules are found to fill the vacancies, giving rise to p-type doping in SnS₂. As a result, decrease in the drain current of SnS₂-FET can be found as a signal of HCHO detection. Furthermore, considering the future mass-production of sensors, we demonstrate large-scale growth of the SnS₂ film by means of magnetron-sputtering deposition and subsequent annealing in a diluted hydrogen sulfide atmosphere. The sputtered film is also found to exhibit a good sensing ability to HCHO.