Related Experiment Video
Updated: Dec 28, 2025

Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser
Published on: June 28, 2018
Spin-Momentum-Locking Inhomogeneities as a Source of Bilinear Magnetoresistance in Topological Insulators
A Dyrdał1,2, J Barnaś1, A Fert3
1Faculty of Physics, Adam Mickiewicz University, 61-614 Poznań, Poland.
Abstract:
A new mechanism of bilinear magnetoresistance (BMR) is proposed and studied theoretically within the minimal model describing surface electronic states in topological insulators. The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both magnetic field and current (electric field). The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to inhomogeneities of spin-momentum locking, that unavoidably appear as a result of structural defects in topological insulators. The proposed mechanism leads to the BMR even if the electronic band structure is isotropic (e.g., absence of hexagonal warping), and is shown to be dominant at lower Fermi energies.
More Related Videos
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
06:49Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
Published on: April 12, 2019
Related Concept Videos
Magnetic Fields
A magnetic field is defined by the force that a charged particle experiences...
Diamagnetism
Diamagnetism was discovered by Anton Brugmans in 1778 when he observed that bismuth gets repelled by magnetic fields, thus theorizing that diamagnets get repelled by magnets....
Paramagnetism
Atomic Nuclei: Nuclear Relaxation Processes
Potential Due to a Magnetized Object
The vector...
Lenz's Law
If a bar magnet is moved toward a coil such that the magnetic flux...