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Related Concept Videos

P-N junction01:11

P-N junction

1.0K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.0K
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.6K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.6K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

800
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
800
Introduction to Vertical Curves01:24

Introduction to Vertical Curves

472
Vertical curves are parabolic transitions that connect different grades on highways and railroads, ensuring a smooth alignment between back and forward tangents. The back tangent represents the initial grade, while the forward tangent defines the subsequent grade. These curves can be symmetrical, with equal tangent lengths, or nonsymmetrical, with varying lengths. The key points defining a vertical curve include the Point of Vertical Intersection (P.V.I.), where the tangents meet; the Point of...
472
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

491
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
491
Euler's Formula for Pin-Ended Columns01:21

Euler's Formula for Pin-Ended Columns

617
In structural engineering, the stability of columns under compressive axial loads is a critical consideration, described as buckling. A typical example involves a column PQ, which is pin-connected at both ends and subjected to a centric axial load F applied at one end, with a reaction force of F' = -F at the other end. Here, it is crucial to understand that when an applied load exceeds the critical load, buckling occurs as the system becomes unstable.
To calculate the critical load, envision...
617

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Picometer-Precision Atomic Position Tracking through Electron Microscopy
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Picometer-Precision Atomic Position Tracking through Electron Microscopy

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Mixed-Dimensional Vertical Point p-n Junctions.

Jin Zhang1,2, Lin Cong1, Ke Zhang1

  • 1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China.

ACS Nano
|February 22, 2020
PubMed
Summary
This summary is machine-generated.

We developed a novel vertical point p-n junction (VPpnJ) using layered 2D materials and carbon nanotubes. This device demonstrates tunable optoelectronic properties and a photovoltaic effect, paving the way for advanced nanoelectronics.

Keywords:
2D materialscarbon nanotubephotodetectorphotovoltaicp−n junction

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Mixed-dimensional van der Waals (vdW) heterostructures combining 1D and 2D materials show promise for nanoelectronic and nano-optoelectronic applications.
  • Vertical p-n junctions are crucial components in electronic and optoelectronic devices.

Purpose of the Study:

  • To introduce a novel vertical point p-n junction (VPpnJ) based on 1D/2D heterostructures.
  • To investigate the gate-tunable electronic and optoelectronic properties of the VPpnJ.
  • To explore the device's potential as a multi-mode photodetector.

Main Methods:

  • Fabrication of a vertical stacked molybdenum disulfide/tungsten diselenide p-n junction sandwiched between cross-stacked carbon nanotubes (CNTs).
  • Utilized gate modulation to switch the device between p-n and n-n junction configurations.
  • Characterized the device's performance as a photodetector under varying gate voltages.

Main Results:

  • The VPpnJ device exhibited tunable photosensitive areas around the CNTs and the cross point based on gate voltage.
  • An obvious photovoltaic effect was observed in the p-n junction regime.
  • Achieved an external quantum efficiency of 42.7% for the VPpnJ photodetector.
  • Demonstrated electrical control over electronic and optoelectronic characteristics via gate-tunable interfacial built-in electric fields.

Conclusions:

  • The developed VPpnJ showcases functional diversity in 1D/2D heterostructures.
  • The device's tunable properties make it a promising candidate for future nanoelectronics and nano-optoelectronics.
  • Gate-tunable interfacial built-in electric fields are key to controlling the device's characteristics.