Inelastic mean free path measurement by STEM-EELS technique using needle-shaped specimen

Inelastic mean free path (IMFP) was determined by electron energy loss spectroscopy (EELS) to estimate the accurate thickness of TEM thin foil using needle-shaped specimen. From EELS measurements performed for 99.99% Al, Si wafer and 99.99% Fe, linear relationships were confirmed between the thickness of the TEM thin foil and the ratio of the total intensity of EELS spectrum to the total intensity of zero-loss spectrum for all samples. By weighted least-square fitting, the IMFP was estimated to be 143-150 nm for Al, 159-165 nm for Si with amorphous layer, and 92-94 nm for Fe with the collection semi-angle β = 11.9 - 35.7 mrad, and accelerated voltage of 200 kV. Thus, the dependence of IMFP on β is not dominant. The accuracy depends on the roundness of the cross-section of the needle-shaped specimen, and is observed to be low in terms of percentage in this work.