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MOSFET

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Updated: Dec 27, 2025

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Published on: June 23, 2017

Flexible Metal Oxide Semiconductor Devices Made by Solution Methods.

Jeong-Wan Jo^1,2, Seung-Han Kang¹, Jae Sang Heo³

¹School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06980, Republic of Korea.

Chemistry (Weinheim an Der Bergstrasse, Germany)

|February 25, 2020

Summary

This summary is machine-generated.

Researchers are developing low-temperature, solution-processed flexible metal oxide semiconductor devices for next-generation electronics. This approach overcomes high-temperature limitations, enabling advanced flexible circuits and self-powered systems.

Keywords:

flexible electronics low-temperature processing semiconductors solution processing thin films

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Area of Science:

Materials Science
Electronics Engineering
Nanotechnology

Background:

Solution-based methods offer scalable, low-cost fabrication for flexible metal oxide devices.
High process temperatures currently limit the application of these devices in flexible electronics.

Purpose of the Study:

To review recent research on low-temperature, solution-processed flexible metal oxide semiconductor devices.
To address challenges and highlight advances in materials, processes, and device integration.

Main Methods:

Review of current literature on solution-processed metal oxide semiconductors.
Analysis of advancements in thin-film transistor (TFT) fabrication and circuit integration.
Exploration of energy-harvesting devices for self-powered systems.

Main Results:

Development of low-temperature processing techniques for flexible metal oxide semiconductors.
Demonstration of integrated flexible circuits and systems, including displays and sensors.
Emerging flexible energy-harvesting devices for self-powered applications.

Conclusions:

Low-temperature, solution-processed metal oxide semiconductors are crucial for advancing flexible electronics.
Continued research in materials and processes will enable complex, integrated flexible systems.
Flexible energy harvesting integrated with electronic systems offers pathways to self-powered devices.