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Updated: Dec 27, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Resistive switching studies in VO2 thin films
Abhimanyu Rana1,2, Chuan Li1, Gertjan Koster1
1Faculty of Science and Technology, and MESA+ Institute of Nanotechnology, University of Twente, Enschede, The Netherlands.
Abstract:
The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.
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