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Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

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In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
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Resistance and Conductance01:25

Resistance and Conductance

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A conductor's DC resistance at a given temperature is influenced by its resistivity, length, and cross-sectional area. Resistivity is an inherent property of the conductor material, with annealed copper serving as the international standard for measurement. For instance, the resistivity of hard-drawn aluminum at 20 degrees Celsius is 61% of the standard conductivity of annealed copper.
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Resistance01:19

Resistance

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When a current moves through any conductor, the conductor causes some level of difficulty for the current to flow. The measure of that difficulty is known as the resistance of the material and is represented by R. Every material has its own resistance. In the case of conductors, heat is emitted whenever a current passes through them. Resistance depends on the resistivity of the material. Resistivity is a characteristic of the material used to fabricate electrical components, whereas the...
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Voltammetry: Stripping Methods01:13

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Anodic Stripping Voltammetry (ASV), Cathodic Stripping Voltammetry (CSV), and Adsorptive Stripping Voltammetry (AdSV) are electrochemical techniques used to determine trace amounts of analytes in solution. These methods involve applying a potential to an electrode and measuring the resulting current.
Anodic Stripping Voltammetry (ASV)
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Resistivity01:22

Resistivity

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When a voltage is applied to a conductor, an electrical field is generated, and charges in the conductor feel the force due to the electrical field. The current density that results depends on the electrical field and the properties of the material. In some materials, including metals at a given temperature, the current density is approximately proportional to the electrical field. In these cases, the current density can be modeled as:
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Schottky Barrier Diode01:27

Schottky Barrier Diode

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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Updated: Dec 27, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Resistive switching studies in VO2 thin films.

Abhimanyu Rana1,2, Chuan Li1, Gertjan Koster1

  • 1Faculty of Science and Technology, and MESA+ Institute of Nanotechnology, University of Twente, Enschede, The Netherlands.

Scientific Reports
|February 26, 2020
PubMed
Summary
This summary is machine-generated.

This study investigates the insulator-to-metal transition in vanadium dioxide (VO2) thin films, crucial for memristive electronics. Researchers demonstrated controllable resistance states near room temperature using tailored temperature sweeps and current pulses.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition (IMT).
  • This IMT occurs near room temperature, making it promising for electronic applications.
  • VO2-based systems are of interest for memristive devices and novel electronics.

Purpose of the Study:

  • To investigate the hysteretic IMT of VO2 thin films in detail.
  • To explore the influence of temperature and applied bias currents on the VO2 transition.
  • To demonstrate controllable resistance states for memristive applications.

Main Methods:

  • Pulsed laser deposition was used to grow VO2 thin films on TiO2 substrates.
  • The study involved varying temperature and applied bias currents.
  • Tailored temperature sweeps and current-induced Joule heating were employed.

Main Results:

  • The hysteretic IMT of VO2 was studied under varying temperature and bias currents.
  • Multiple, stable resistance states were controllably set within the transition temperature range.
  • The resistive transition was observed to occur close to room temperature.

Conclusions:

  • The hysteretic IMT in VO2 thin films can be precisely controlled.
  • Tailored temperature sweeps and current pulses enable the setting of stable resistance states.
  • These findings support the development of novel memristive electronic devices.