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Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of

Y C Lin1, S H Chen2, P H Lee2

  • 1Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.

Micromachines
|February 27, 2020
PubMed

Keywords:
copper metallizationhigh-electron-mobility transistorsmillimeter wave

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