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Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors
Alessandro Grillo1,2, Antonio Di Bartolomeo1,2, Francesca Urban1,2
1Physics Department "E. R. Caianiello", University of Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy.
ACS Applied Materials & Interfaces
|February 27, 2020
Summary
Germanium arsenide (GeAs) field-effect transistors exhibit temperature-dependent conductivity. A two-dimensional (2D) channel forms at higher temperatures, influencing electrical transport properties.
Area of Science:
- Semiconductor physics
- Materials science
- Nanotechnology
Background:
- Germanium arsenide (GeAs) is an emerging material for advanced electronic devices.
- Understanding charge transport in ultrathin channels is crucial for next-generation transistors.
Purpose of the Study:
- To fabricate and electrically characterize germanium arsenide (GeAs) field-effect transistors (FETs) with ultrathin channels.
- To investigate the temperature-dependent electrical transport properties of GeAs FETs.
Main Methods:
- Fabrication of GeAs field-effect transistors with ultrathin channels.
- Electrical characterization in the temperature range of 20-280 K.
- Numerical simulations to validate experimental observations.
Main Results:
- Observed p-type conductivity and field-effect mobility increase with temperature.
- Detected an anomalous peak in carrier density at approximately 75 K.
- Identified the formation of a two-dimensional (2D) conducting channel at higher temperatures.
Conclusions:
- The 2D channel formation, driven by carrier concentration and gate field, dominates conductance at elevated temperatures.
- Electrical conductivity transitions from variable-range hopping at low temperatures to band-type transport at higher temperatures.
- Numerical simulations confirmed the 2D channel formation, aligning with experimental data.
Keywords:
2D conductioncarrier densityfield-effect transistorsgermanium arsenidemobilitytemperature-dependent conductionvariable-range hoppingMore Related Videos
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