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Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires
Mariem Naffeti1,2,3, Pablo Aitor Postigo2, Radhouane Chtourou1
1Laboratory of Nanomaterials and Systems for Renewable Energies (LaNSER), Research and Technology Center of Energy, Techno-Park Borj-Cedria, Bp 95, Hammam-Lif, Tunis 2050, Tunisia.
Nanomaterials (Basel, Switzerland)
|February 29, 2020
Summary
Vertically aligned silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching show tunable properties. Shorter SiNWs exhibit enhanced optical and electrical activity, making them ideal for optoelectronic devices and solar cells.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Vertically aligned silicon nanowires (SiNWs) are promising for optoelectronic applications.
- Controlling SiNW properties is crucial for device performance.
- Metal-assisted chemical etching offers a scalable fabrication route.
Purpose of the Study:
- To investigate the impact of etching time on SiNW properties.
- To analyze morphological, structural, optical, and electrical characteristics.
- To determine optimal conditions for optoelectronic device applications.
Main Methods:
- Fabrication of SiNWs using metal-assisted chemical etching.
- Morphological analysis via scanning electron microscopy (SEM).
- Structural and optical characterization using photoluminescence (PL) and FTIR spectroscopy.
- Electrical property assessment through current-voltage (I-V) measurements.
Main Results:
- SiNW length increased with etching time; filling ratio decreased.
- Broadband photoluminescence attributed to silicon nanocrystallites (SiNCs).
- Reduced reflectance (9-15%) compared to silicon wafers.
- Rectifying behavior observed, with diode parameters dependent on SiNW geometry.
Conclusions:
- Etching time is a critical parameter for tuning SiNW properties.
- Shorter SiNWs demonstrate superior optical and electrical performance.
- Optimized SiNWs are highly suitable for optoelectronic devices and solar cells.
