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Synthesis of a Thiol Building Block for the Crystallization of a Semiconducting Gyroidal Metal-sulfur Framework
Published on: April 9, 2018
An air-stable anionic two-dimensional semiconducting metal-thiolate network and its exfoliation into ultrathin
Qi Zeng1, Lei Wang, Yitao Huang
1School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, Guangdong, China. junhe@gdut.edu.cn wmliao@gdut.edu.cn.
Abstract:
The black, small-bandgap semiconducting framework Eu-dfdmat features extensive Eu3+-sulfur bridges from the linear linker 2,5-difluoro-3,6-dimercaptoterephthalate (dfdmt). Each Eu center is chelated to four dfdmt linkers to form an anionic coordination sphere involving four carboxyl O and four mercapto S centers (EuO4S4), wherein the charge buildup can be alleviated by the electron-withdrawing fluoro groups. The extensive metal-linker bonding, together with a trace of Eu2+ species, appears to boost electronic interaction in the 2D net, generating a small band gap of 1.31 eV (946 nm), albeit a modest conductivity (e.g., 10-6 S m-1). The crystals also exhibit persistent EPR signals indicative of organic radicals (g = 2.002). The Eu-dfdmt solid are stable in air and can be exfoliated into ultrathin nanosheets (ca. 5 nm; 6-8 layers).

