Local strain-driven migration of oxygen vacancies to apical sites in YBa2Cu3O7-x

Bernat Mundet1, Steven T Hartman2, Roger Guzman1

  • 1Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain. jgazquez@gmail.com.

Nanoscale
|February 29, 2020
PubMed

Related Concept Videos

Normal Strain under Axial Loading01:20

Normal Strain under Axial Loading

Normal strain under axial loading is an important concept in the field of mechanics of materials. Axial loading implies the application of a force along the axis of a material, like a column or bar. This force can either compress or stretch the material. In the context of axial loading, normal strain is the deformation experienced by the material in the direction of the loading force. It's calculated as the change in length divided by the original length of the material. This unitless ratio...
1.0K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
1.8K
Cell Migration01:09

Cell Migration

Cell migration, the process by which cells move from one location to another, is essential for the proper development and viability of organisms throughout their life. When cells are not able to migrate properly to their ordained locations, various disorders may occur. For example, disruption in cell migration causes chronic inflammatory diseases such as arthritis.
18.3K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
491