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Updated: Dec 27, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
V-groove-shaped silicon-on-insulator photopolarized activated modulator (SOIP2AM): a polarizing transistor
Abstract:
In this paper, we present the design of a silicon optoelectronic device capable of speeding up processing capabilities. The data in this device are electronic, while the modulation control is optical. It can be used as a building block for the development of optical data processing by silicon-based processors based on typical microelectronics manufacturing processes. A V-groove-based structure fabricated as part of the device allows obtaining enhanced sensitivity to the polarization of the photonic control signal and thus allows obtaining a polarization-sensitive modulator.
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