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Current Rerouting Improves Heat Removal in Few-Layer WSe Devices.
Arnab K Majee1, Zahra Hemmat2, Cameron J Foss1
1Department of Electrical and Computer Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003-9292, United States.
Few-layer (FL) transition-metal dichalcogenides like WSe2 experience self-heating, degrading performance. Current reroutes to cooler bottom layers, improving heat removal and device mobility in few-layer WSe2 devices.
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Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Few-layer (FL) transition-metal dichalcogenides (TMDs) show promise for nanoelectronics due to enhanced carrier mobility.
- Self-heating effects in FL-TMDs under operating conditions negatively impact their electronic and thermal properties.
Purpose of the Study:
- To investigate the electrothermal behavior of few-layer WSe2 devices.
- To understand the impact of Joule heating on carrier mobility and current distribution.
- To explore strategies for optimizing device performance and thermal management.
Main Methods:
- Fabrication of few-layer WSe2 devices.
- Measurement of current-voltage (I-V) characteristics.
- Quantification of device temperature using Raman thermometry.
- First-principles simulations for thermal analysis.
Main Results:
- Joule heating causes significant, layer-dependent temperature increases in FL-WSe2 devices.
- Elevated temperatures in top layers degrade mobility, leading to current rerouting to cooler bottom layers.
- Current rerouting enhances heat dissipation by flowing through layers with higher thermal conductance.
- Lateral heat removal through contacts is observed, influenced by thermal healing length.
Conclusions:
- Self-heating significantly affects carrier mobility and current flow in FL-WSe2 devices.
- Current rerouting to bottom layers is a beneficial phenomenon for thermal management.
- Understanding layer-dependent thermal effects is crucial for optimizing FL-TMD device design and performance.

