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Updated: Dec 27, 2025

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Temperature Dependence of Low Frequency Noise in Silicon on Insulator Tunneling Field Effect Transistor
Hyun-Dong Song1, Hyeong-Sub Song1, Sunil Babu Eadi1
1Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Korea.
Abstract:
In this work, noise mechanism of a tunneling field-effect transistor (TFET) on a silicon-on-insulator substrate was studied as a function of temperature. The results show that the drain current and subthreshold slope increase with increase in temperature. This temperature dependence is likely caused by the generation of greater current flow owing to decreased silicon band gap and leakage. Further, the TFET noise decreases with increase in temperature. Therefore, the effective tunneling length between the source and the channel appears to decrease and Poole-Frenkel tunneling occurs.
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