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Mobility Improvement of Sol-Gel Method Processed Transparent SnSx Thin Films by Na Doping
Xiaoxin Li1, Yifei Huang1, Jie Zeng1
1Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, Hubei, PR China.
Abstract:
The In-Ga-Zn-O oxide semiconductor (a-IGZO) is currently a well-researched and widely used material in the semiconductor industry; however, due to the shortage of indium, new transparent conducting films (TCFs) need to be developed as a substitute of a-IGZO. For this, a new TCF, SnS (the compound of SnS₂ and SnS) nanomaterial using spin-coating method is processed. We systematically investigate the structure, electrical and optical properties of SnS and the Na doped SnS nanomaterial films. Through Na doping, Hall electron mobility of the processed material is increased to 59.6 cm²/Vs and its corresponding average transmittance is 62% in the range 400-800 nm, indicating the material's potential applications as a transparent conductor and in invisible thin film transistors (TFTs).
