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Etch Characteristics of Nanoscale Patterned Magnetic Tunnel Junction Stacks Using Pulse-Modulated Radio Frequency
Jae Yong Lee1, Eun Tack Lim1, Jin Su Ryu1
1Department of Chemistry and Chemical Engineering, Center for Design and Applications of Molecular Catalysts, Inha University, 100 Inharo, Michuhol-Gu, Incheon 22212, Korea.
Abstract:
Magnetic tunnel junctions (MTJs) patterned with 70 × 70 nm² square arrays were etched in a CH₄/O₂/Ar gas mixture by pulse-modulated inductively coupled plasma reactive ion etching (ICPRIE). A good etch profile of MTJs with etch slope of approximately 82° was achieved by adjusting the on-off duty ratio of the plasma and pulse frequency. Langmuir probe analysis and optical emission spectroscopy confirmed that the balance between the formation of the passivation layer as an etch byproduct and sputtering effect is responsible for the etch selectivity and etch profile with a high degree of anisotropy. It is concluded that the application of pulse-modulated plasma on ICPRIE can be an effective method to obtain the anisotropic etch profile of nanometer-scale MTJs.
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