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Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type

Sunil Babu Eadi1, Jeong Chan Lee1, Hyeong-Sub Song1

  • 1Department of Electronics Engineering, Chungnam National University, Daejeon, Korea.

Scientific Reports
|March 6, 2020
PubMed

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