Zinc Oxide Films with High Transparency and Crystallinity Prepared by a Low Temperature Spatial Atomic Layer...

Area of Science:

• Materials Science and Engineering
• Nanotechnology
• Solid State Physics

Background:

• Zinc oxide (ZnO) is a semiconductor with significant optoelectronic properties.
• Thin films of ZnO are crucial for various electronic and photonic devices.
• Controlling film properties is key to optimizing device performance.

Purpose of the Study:

• To investigate the impact of substrate temperature on ZnO thin film properties.
• To explore the potential of spatial atomic layer deposition (SALD) for ZnO film fabrication.
• To evaluate the optical, electrical, and structural characteristics of deposited ZnO films.

Main Methods:

• Spatial atomic layer deposition (SALD) using diethylzinc and water.
• Substrate temperature variation from 55 °C to 135 °C.
• Characterization of optical transmittance, electrical resistivity, and structural properties.

Main Results:

• All ZnO films showed >80% transmittance in the visible/near-infrared range.
• Resistivity ranged from (3.2-9.0) × 10^-3 Ω·cm, with slight decrease at higher temperatures.
• Films deposited at 55 °C exhibited high crystallinity with (1 0 0) orientation; grain size increased with temperature.

Conclusions:

• SALD offers a wide process window for ZnO thin film deposition.
• Substrate temperature significantly influences ZnO film crystallinity and grain growth.
• The study provides insights into optimizing ZnO films for optoelectronic applications.