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High dielectric ternary oxides from crystal structure prediction and high-throughput screening
Jingyu Qu1,2, David Zagaceta2, Weiwei Zhang3
1College of Science, China Agricultural University, Beijing, 100083, China.
Scientific Data
|March 8, 2020
Summary
Researchers discovered 33 new high dielectric materials from ternary oxides using advanced computational methods. This breakthrough offers promising candidates for next-generation electronic devices and expands the search for novel dielectric materials.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Chemistry
Background:
- Advancements in modern electronics necessitate novel high dielectric materials.
- Oxides are prime candidates due to their high dielectric constants and wide band gaps.
- Previous research primarily focused on known dielectric materials, limiting discovery.
Purpose of the Study:
- To conduct an extensive search for new high dielectric materials within ternary oxides.
- To identify promising candidates for modern electronic device applications.
- To establish a computational framework for discovering novel dielectric materials.
Main Methods:
- Utilized crystal structure prediction algorithms to generate potential material candidates.
- Employed density functional perturbation theory calculations for material property analysis.
- Implemented a multi-stage screening process for efficient identification of promising materials.
Main Results:
- Identified 441 new low-energy ternary oxide materials.
- Screened and selected 33 materials as potential high dielectrics for device applications.
- Demonstrated the efficacy of combining crystal structure prediction and high-throughput screening.
Conclusions:
- The study successfully identified a significant number of novel high dielectric materials.
- The developed computational approach provides a new avenue for exploring unexplored dielectric materials.
- The identified materials hold potential for revolutionizing modern electronic device performance.

