Related Experiment Video
Updated: Dec 26, 2025

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Abstract:
Raman tensors, one of the basic physical properties of ${{\rm MoS}_2}$MoS2, are rarely reported. Here, angle-resolved polarized Raman scatterings on basal and cross planes of layered ${{\rm MoS}_2}$MoS2 were carried out using the geometry configuration of parallel polarization, and the Raman tensors of three optical vibration modes were systematically studied. As a polar vibration mode, the differential polarizability of the ${{\rm A}_{1{\rm g}}}$A1g mode corresponding to the Raman tensor along the $c$c direction is larger than that along the $a$a direction. In addition, it is also larger than that formed by ${{\rm E}_{2{\rm g}}}$E2g and ${{\rm E}_{1{\rm g}}}$E1g modes. All the experimental results above are beneficial to the understanding of inelastic light-scattering process of ${{\rm MoS}_2}$MoS2.
More Related Videos
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
Valence Bond Theory
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

