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Updated: Dec 26, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Characterisation of negative-Udefects in semiconductors
José Coutinho1, Vladimir P Markevich2, Anthony R Peaker2
1i3N, Department of Physics, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal.
None:
This review aims at providing a retrospective, as well as a description of the state-of-the-art and future prospects regarding the theoretical and experimental characterisation of negative-Udefects in semiconductors. This is done by complementing the account with a description of the work that resulted in some of the most detailed, and yet more complex defect models in semiconductors. The essential physics underlying the negative-Ubehaviour is presented, including electronic correlation, electron-phonon coupling, disproportionation, defect transition levels and rates. Techniques for the analysis of the experimental data and modelling are also introduced, namely defect statistics, kinetics of carrier capture and emission, defect transformation, configuration coordinate diagrams and other tools. We finally include a showcase of several works that led to the identification of some of the most impacting negative-Udefects in group-IV and compound semiconductors.
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