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Updated: Dec 25, 2025

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
Accurate electron affinity of Ga and fine structures of its anions
Rulin Tang1, Xiaoxi Fu1, Yuzhu Lu1
1Department of Physics, State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China.
Abstract:
We report the high-resolution photoelectron spectra of negative gallium anions obtained via the slow-electron velocity-map imaging method. The electron affinity of Ga is determined to be 2429.07(12) cm-1 or 0.301 166(14) eV. The fine structures of Ga are well resolved: 187.31(22) cm-1 or 23.223(27) meV for 3P1 and 502.70(28) cm-1 or 62.327(35) meV for 3P2 above the ground state 3P0, respectively. The photoelectron angular distribution for photodetachment from Ga-(4s24p2 3P0) to Ga(4s25s 2S1/2) is measured. An unexpected perpendicular distribution instead of an isotropic distribution is observed, which is due to a resonance near 3.3780 eV.
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