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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Charge and heat current rectification by a double-dot system within the Coulomb blockade regime
1Department of Physics and Electronics, University of Puerto Rico-Humacao, CUH Station, Humacao, PR 00791, United States of America.
Abstract:
Nanoscale rectifiers are known to have significant nanoelectronic and nanoheatronic applications. In the present work we theoretically analyze rectifying properties of a junction including a couple of quantum dots asymmetrically coupled to the electrodes. The charge and heat current rectification in the system is controlled by the dots occupation numbers and interdot Coulomb interactions. We examine the dependencies of the rectification ratio on the electron energy levels on the dots, on the intensity of electron-electron interactions, on the gate and bias voltages and on the thermal gradients applied across the system. It is shown that the considered double-dot system possesses significant potentialities as a common as well as a heat diode.
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