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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Thickness-Independent Energy Dissipation in Graphene Electronics
Yuehua Wei1, Renyan Zhang1,2,3, Yi Zhang4
1College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China.
Abstract:
The energy dissipation issue has become one of the greatest challenges of the modern electronic industry. Incorporating graphene into the electronic devices has been widely accepted as a promising approach to solve this issue, due to its superior carrier mobility and thermal conductivity. Here, using Raman spectroscopy and infrared thermal microscopy, we identify the energy dissipation behavior of graphene device with different thicknesses. Surprisingly, the monolayer graphene device is demonstrated to have a comparable energy dissipation efficiency per unit volume with that of a few-layer graphene device. This has overturned the traditional understanding that the energy dissipation efficiency will reduce with the decrease of functional materials dimensions. Additionally, the energy dissipation speed of the monolayer graphene device is very fast, promising for devices with high operating frequency. Our finding provides a new insight into the energy dissipation issue of two-dimensional materials devices, which will have a global effect on the development of the electronic industry.
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