Performance improvement of Y-doped VO_x microbolometers with nanomesh antireflection layer

In the study, the yttrium (Y)-doped vanadium oxide (VO_x:Y) films used as the sensitive layers of microbolometers were deposited using a radio frequency magnetron co-sputtering system. The temperature coefficient of resistance (TCR) of the VO_x:Y films was enhanced from -1.88%/°C to -2.85%/°C in comparison with that of the VO_x films. To further improve the performance of microbolometers, the nanomesh antireflection layer was placed on the top surface of the microbolometers to reduce the infrared reflection. The responsivity, thermal time constant, thermal conductivity, absorptance, and detectivity of the VO_x:Y microbolometers with nanomesh antireflection layer were 931.89 ± 48 kV/W, 4.48 ms, 6.19×10^-8 W/K, 74.41% and 2.20×10⁸ cmHz^0.5W^-1, respectively.