Characteristics of Gallium Nitride-Based Dual-Gate Metal-Oxide-Semiconductor High-Electron-Mobility Transistors with...

To minimize the influence of interface states and surface damage, by inserting a gate oxide layer, the photoelectrochemical oxidation method was utilized to directly grow the gate oxide layer while simultaneously creating the gate-recessed regions onto gallium nitride (GaN)-based single-gate and dual-gate metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Compared to the single-gate structure, the two-dimensional electron gas (2DEG) channel layer was also modulated by the auxiliary gate, in addition to being modulated by the main gate. Consequently, a wider transconductance range, larger saturation drain-source current, lower gate leakage current, and higher drain-source breakdown voltage were the benefits derived from the auxiliary gate functionality in the dual-gate devices. Moreover, the low-frequency noise characteristics of the GaN-based MOS-HEMTs could also be improved by the dual-gate structure. These experimental results demonstrated that incorporating a dual-gate structure and directly grown gate oxide layers onto GaN-based MOS-HEMTs is a promising alternative for GaN-based low-noise, high-power, and high-frequency applications.