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    Area of Science:

    • Photonics and Optical Engineering
    • Materials Science
    • Nonvolatile Memory Devices

    Background:

    • Silicon photonic devices are crucial for high-speed communication and computing.
    • Integrating memory functionality into photonic circuits requires efficient light-matter interaction and broadband operation.
    • Existing solutions often face limitations in bandwidth, power consumption, or scalability.

    Purpose of the Study:

    • To develop a nonvolatile, multilevel silicon photonic memory device.
    • To achieve broadband operation and wavelength-division multiplexing (WDM) capabilities.
    • To enhance light-matter interaction and reduce power consumption for memory integration.

    Main Methods:

    • Integration of a multimode interference (MMI) coupler with a micro-racetrack resonator (MRR).
    • Embedding a resistive random-access memory (ReRAM) layer using high-index materials (BiFeO3, Al2O3) and an elevated film stack (EFS).
    • Utilizing a transparent ITO electrode for improved mode confinement and conductivity.

    Main Results:

    • Broadened resonance linewidth (FWHM) in the 1.8-11.7 nm range (0.22-1.47 THz) due to MMI-induced stronger cavity coupling.
    • Enlarged free spectral ranges (FSRs) of 9.9-16.9 nm, enhancing memory state distinguishability and operational stability.
    • Demonstrated nonvolatile, multilevel memory states with wavelength shifts of 4.72 nm and 5.49 nm under 0 V operation, confirming multistate capability.

    Conclusions:

    • The developed CMOS-compatible photonic memory architecture offers broadband, scalable memory functionality with THz-level static optical bandwidth.
    • The MMI-MRR design enables improved memory state distinguishability, channel spacing, and operational stability.
    • This technology holds significant potential for optical storage, logic circuits, neuromorphic computing, and reconfigurable photonic systems.