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Ambipolar transport in narrow bandgap semiconductor InSb nanowires
B Dalelkhan1, D J O Göransson, C Thelander
1NanoLund and Division of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden. hqxu@pku.edu.cn.
Nanoscale
|April 3, 2020
Summary
We studied indium antimonide (InSb) nanowire transistors, observing ambipolar transport. These InSb nanowires show promise for advanced electronics and quantum systems.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Indium antimonide (InSb) nanowires are promising for electronic applications.
- Understanding their transport properties is crucial for device development.
Purpose of the Study:
- To investigate the transport characteristics of top-gated InSb nanowire field-effect transistors.
- To evaluate their potential for CMOS electronics and quantum systems.
Main Methods:
- Fabrication of InSb nanowire field-effect transistors using chemical vapor deposition.
- Transport measurements across varying gate voltages and temperatures.
- Analysis of electrical resistance and current-voltage characteristics.
Main Results:
- Observed ambipolar transport with distinct electron and hole regimes.
- Extracted a bandgap energy of 190-220 meV for a 1 μm device.
- Achieved a record circumference-normalized on-state hole current of 11 μA μm⁻¹ in a 260 nm device.
Conclusions:
- InSb nanowires exhibit ambipolar transport, suitable for complementary metal-oxide-semiconductor (CMOS) electronics.
- The high performance of these nanowires makes them attractive for hybrid electron-hole quantum systems and hole-based spin qubits.
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