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Updated: Dec 25, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Resonantly Driven Singlet-Triplet Spin Qubit in Silicon
K Takeda1, A Noiri1, J Yoneda1
1Center for Emergent Matter Science (CEMS), RIKEN, Wako-shi, Saitama 351-0198, Japan.
Abstract:
We report implementation of a resonantly driven singlet-triplet spin qubit in silicon. The qubit is defined by the two-electron antiparallel spin states and universal quantum control is provided through a resonant drive of the exchange interaction at the qubit frequency. The qubit exhibits long T_{2}^{*} exceeding 1 μs that is limited by dephasing due to the ^{29}Si nuclei rather than charge noise thanks to the symmetric operation and a large micromagnet Zeeman field gradient. The randomized benchmarking shows 99.6% single gate fidelity which is the highest reported for singlet-triplet qubits.
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