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Updated: Dec 25, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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Recent Process of Flexible Transistor-Structured Memory

Yao Ni1, Yongfei Wang2, Wentao Xu1

  • 1Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China.

Small (Weinheim an Der Bergstrasse, Germany)
|April 4, 2020
PubMed

Keywords:
charge-trap transistor memoryferroelectric field-effect transistor memoryfloating-gate transistor memoryoptical memory transistorstransistor-structured artificial synapses

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