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Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes
L Avilés-Félix1, A Olivier2, G Li3
1Spintec, Université Grenoble Alpes, CNRS, CEA, Grenoble INP, IRIG-SPINTEC, 38000, Grenoble, France. luis.avilesfelix@cea.fr.
Scientific Reports
|April 7, 2020
Summary
Researchers developed novel magnetic tunnel junctions for ultra-fast data recording. These junctions use all-optical switching of magnetization, enabling potential terahertz (THz) writing speeds for advanced magnetic memory devices.
Area of Science:
- Spintronics and Photonics
- Materials Science
- Nanotechnology
Background:
- All-optical switching of magnetization in ferrimagnetic alloys using femtosecond laser pulses has garnered interest for high-speed data recording.
- Ultrafast magnetic reversal offers potential for pushing magnetic memory writing speeds towards THz frequencies.
Purpose of the Study:
- To develop perpendicular magnetic tunnel junctions (pMTJs) with all-optical control of magnetization.
- To investigate helicity-independent single-shot switching in Tb/Co nanolayer stacks for data-recording applications.
Main Methods:
- Fabrication of perpendicular magnetic tunnel junctions incorporating Tb/Co nanolayers.
- All-optical switching of magnetization using femtosecond (60 fs) and picosecond (5 ps) laser pulses.
- Characterization of tunneling magnetoresistance (TMR) and resistance-area (RA) product in the developed pMTJs.
Main Results:
- Magnetization toggling of Tb/Co electrodes achieved with laser pulses down to 3.5 mJ/cm².
- Successful switching of CoFeB-[Tb/Co] electrodes demonstrated, even after annealing at 250°C.
- pMTJs integrated with [Tb/Co] electrodes showed maximum TMR of 41% and RxA of 150 Ωμm² (current-in-plane), with 28-38% TMR in nanopatterned pillars.
Conclusions:
- Demonstrated a breakthrough in developing pMTJs controllable by single laser pulses.
- Highlighted a technologically viable pathway for hybrid spintronic-photonic systems with THz switching speeds.
- The developed pMTJs show promise for next-generation high-speed magnetic memory and data storage.
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