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Interfacial Reactions between Ga and Cu-10Ni Substrate at Low Temperature
Shiqian Liu1, Guang Zeng2, Wenhui Yang3
1Nihon Superior Centre for the Manufacture of Electronic Materials (NS CMEM), School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia.
ACS Applied Materials & Interfaces
|April 10, 2020
Summary
Gallium (Ga) alloys offer enhanced low-temperature bonding in electronics. Using copper-nickel (Cu-10Ni) substrates with Ga accelerates intermetallic compound formation and improves thermal stability.
Area of Science:
- Materials Science
- Metallurgy
- Electronic Packaging
Background:
- Gallium (Ga) alloys are gaining interest for low-temperature electronic packaging applications.
- Understanding interfacial reactions is crucial for reliable bonding.
Purpose of the Study:
- To investigate the interfacial reaction between liquid Ga and Cu-10Ni substrates at 30 °C.
- To compare IMC growth and thermal properties with binary Ga/Cu couples and conventional solders.
Main Methods:
- Systematic investigation of interfacial reactions at 30 °C.
- Reaction kinetics study and synchrotron X-ray diffraction (XRD) analysis.
- Thermal stability and coefficient of thermal expansion measurements from 25 to 300 °C.
Main Results:
- Formation of nanocrystalline Ga5Ni and CuGa2 layers on Cu-10Ni substrates.
- Accelerated intermetallic compound (IMC) growth on Cu-10Ni compared to Cu substrates.
- Ni incorporation in CuGa2 enhanced thermal stability and reduced thermal expansion anisotropy.
Conclusions:
- Cu-10Ni substrates enable faster metallurgical bonding with Ga compared to Cu substrates.
- Ga alloys with Cu-10Ni show promising thermal properties for low-temperature joining.
- Results support expanding the application range of Ga as a low-temperature joining material.
