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Related Experiment Video

Updated: Dec 24, 2025

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

Published on: August 17, 2017

Trapping and Counting Ballistic Nonequilibrium Electrons.

Lars Freise¹, Thomas Gerster¹, David Reifert¹

¹Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany.

Physical Review Letters

|April 14, 2020

Summary

This summary is machine-generated.

We demonstrate high-fidelity electron trapping in GaAs/AlGaAS heterostructures using magnetic fields. This study details electron energy decay and scattering within confined nodes for advanced quantum device applications.

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Area of Science:

Quantum physics
Condensed matter physics
Semiconductor heterostructures

Background:

Electrons in semiconductors can exhibit ballistic transport at high energies.
Controlling electron energy and confinement is crucial for quantum technologies.
Gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) heterostructures are key platforms for studying electron behavior.

Purpose of the Study:

To demonstrate and characterize the trapping of energetic electrons in a magnetic field.
To investigate electron energy decay and transport dynamics in modified mesa structures.
To measure the probabilities of electron trapping and escape using full counting statistics.

Main Methods:

Utilizing GaAs/AlGaAs heterostructures under high magnetic fields.
Employing gate-modified mesa structures to guide electron transport.
Measuring full counting statistics via single-charge detection.
Characterizing electron wave packets by modulating tunnel barrier transmission.

Main Results:

Achieved low-loss ballistic electron transport along a gate-modified mesa edge.
Observed effective decay of excess electron energy around a mesa-confined node, enabling high-fidelity trapping.
Quantified electron trapping and escape probabilities within the node.
Determined energetic and arrival-time distributions of captured electron wave packets.

Conclusions:

High-fidelity trapping of far-above-equilibrium electrons is achievable in magnetic fields.
Gate-controlled mesa structures effectively manage electron energy decay for trapping.
Full counting statistics provide precise measurements of electron trapping dynamics.