Decade of 2D-materials-based RRAM devices: a review

Area of Science:

• Materials Science
• Nanotechnology
• Electrical Engineering

Background:

• Two-dimensional (2D) materials possess unique electrical, chemical, mechanical, and physical properties due to their ultrathin, flexible, and multilayered structure.
• These materials are increasingly utilized in advanced electronic devices.

Purpose of the Study:

• This review focuses on resistive random access memories (RRAMs) utilizing 2D materials and their nanocomposites.
• It examines device structures, conduction mechanisms, resistive switching properties, fabrication, challenges, and future prospects.

Main Methods:

• Review of existing literature on 2D materials for RRAM applications.
• Analysis of device performance metrics, including switching speed, power consumption, retention time, endurance, and mechanical robustness.
• Exploration of material compositions, including graphene, MoS2, hBN, MoSe2, WS2, WSe2, and their nanocomposites.

Main Results:

• Graphene, graphene derivatives, and MoS2 are key 2D materials for RRAMs, with others like hBN, MoSe2, WS2, and WSe2 also showing promise.
• Conduction mechanisms involve metallic ion penetration or intrinsic species migration.
• 2D material-based RRAMs exhibit advantages: fast switching (<10 ns), low power (10 pJ), low voltage (<1 V), long retention (>10 years), high endurance (>10^8 cycles), and mechanical robustness.

Conclusions:

• 2D materials and their nanocomposites are highly promising for advanced nonvolatile RRAM devices.
• Enhancements through blending with nanoparticles, polymers, and semiconductors further improve resistive switching properties.
• Continued research into 2D materials will drive innovation in high-performance memory technologies.