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Tuneable quantum spin Hall states in confined 1T' transition metal dichalcogenides
Biswapriyo Das1, Diptiman Sen2, Santanu Mahapatra3
1Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc) Bangalore, Bangalore, 560012, India. biswapriyodas1@gmail.com.
Abstract:
Investigation of quantum spin Hall states in 1T' phase of the monolayer transition metal dichalcogenides has recently attracted the attention for its potential in nanoelectronic applications. While most of the theoretical findings in this regard deal with infinitely periodic crystal structures, here we employ density functional theory calculations and [Formula: see text] Hamiltonian based continuum model to unveil the bandgap opening in the edge-state spectrum of finite width molybdenum disulphide, molybdenum diselenide, tungsten disulphide and tungsten diselenide. We show that the application of a perpendicular electric field simultaneously modulates the band gaps of bulk and edge-states. We further observe that tungsten diselenide undergoes a semi-metallic intermediate state during the phase transition from topological to normal insulator. The tuneable edge conductance, as obtained from the Landauer-Büttiker formalism, exhibits a monotonous increasing trend with applied electric field for deca-nanometer molybdenum disulphide, whereas the trend is opposite for other cases.
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