Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

794
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
794
MOS Capacitor01:25

MOS Capacitor

1.4K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.4K
MOSFET01:16

MOSFET

1.0K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.0K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

696
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
696
Characteristics of MOSFET01:17

Characteristics of MOSFET

800
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
800
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

484
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
484

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Reconfigurable Electromagnetically Unclonable Functions Based on Graphene Radio-Frequency Modulators.

ACS nano·2025
Same author

A highly sensitive and multiplexed wireless sensing system with skin-like compliance and stretchability for wearable applications.

Science advances·2025
Same author

Silicon photonic physical unclonable function based on waveguide array embedded with phase shifters.

Optics express·2025
Same author

Wearable bioelectronics based on emerging nanomaterials for telehealth applications.

Device·2025
Same author

Multifunctional Porous Soft Composites for Bimodal Wearable Cardiac Monitors.

AIChE journal. American Institute of Chemical Engineers·2024
Same author

Wave propagation, bi-directional reflectionless, and coherent perfect absorption-lasing in finite periodic PT-symmetric photonic systems.

Nanophotonics (Berlin, Germany)·2024
Same journal

Vertically Stacked Indium Gallium Zinc Oxide-Based Three-Dimensional Integrated Circuits.

ACS nano·2026
Same journal

Tunable Nanoparticle Thin-Film Reveals Distance Dependence of Auger-Mediated Radiation Enhancement in Diffuse Midline Glioma.

ACS nano·2026
Same journal

G-Quadruplex Network Engineering in Ionogels: Realizing Robust Biosensing Interfaces for Plant Electrophysiology.

ACS nano·2026
Same journal

Announcing the 2026 <i>ACS Nano</i> Lectureship and <i>ACS Nano</i> Impact Award Laureates.

ACS nano·2026
Same journal

Ultrafast Self-Assembly of Zeolitic Imidazolate Framework-8 Enables Antibody Orientation for Ultrasensitive Lateral Flow Immunoassays.

ACS nano·2026
Same journal

Interfacial Salt Engineering with Alkali and Ammonium Additives for Stable Pure-Blue Perovskite Light-Emitting Diodes and Micropatterned Displays.

ACS nano·2026
See all related articles

Related Experiment Video

Updated: Dec 23, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.6K

Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer.

Kraig Andrews1, Arthur Bowman1, Upendra Rijal1

  • 1Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201, United States.

ACS Nano
|April 23, 2020
PubMed
Summary
This summary is machine-generated.

Researchers engineered contacts for molybdenum disulfide (MoS2) field-effect transistors (FETs) using ultrathin molybdenum selenide (MoSe2) interlayers. This method significantly reduced Schottky barrier height and contact resistivity, improving device performance.

Keywords:
2D semiconductorMoS2Schottky barrier heightcontact resistanceinterlayertransfer length

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.2K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.5K

Related Experiment Videos

Last Updated: Dec 23, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.6K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.2K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.5K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Schottky barrier height (SBH) and contact resistivity are critical parameters limiting the performance of molybdenum disulfide (MoS2) field-effect transistors (FETs).
  • Efficient charge injection and transport in 2D semiconductor devices are essential for advanced electronic applications.

Purpose of the Study:

  • To develop a contact engineering strategy to minimize SBH and contact resistivity in MoS2 FETs.
  • To investigate the effectiveness of ultrathin 2D semiconductor interlayers for contact modification.

Main Methods:

  • Fabrication of MoS2 FETs utilizing ultrathin few-layer MoSe2 as a contact interlayer between the MoS2 channel and Ti electrodes.
  • Electrical characterization to measure SBH, contact resistivity, and current transfer length.

Main Results:

  • A significant reduction in SBH from ~100 meV to ~25 meV was achieved using MoSe2 interlayers.
  • Contact resistivity decreased from ~6 × 10^-5 Ω cm^2 to ~1 × 10^-6 Ω cm^2.
  • Current transfer length was reduced from ~425 nm to ~60 nm, indicating improved contact quality.

Conclusions:

  • The synergy of Fermi-level pinning in MoSe2 and favorable band alignment with MoS2 effectively lowers the SBH.
  • The proposed contact engineering method using MoSe2 interlayers substantially enhances the performance of MoS2 FETs.
  • This approach offers a promising route for developing high-performance 2D electronic devices.