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Published on: June 23, 2018
Ultra-High-Responsivity Vertical Nanowire-based Phototransistor under Standing-Wave Plasmon Mode Interaction Induced
Sheng Bi1,2, Qikun Li1,2, Kyeiwaa Asare-Yeboah3
1Institute of Photoelectric Nanoscience and Nanotechnology, School of Mechanical Engineering, Dalian University of Technology, Dalian 116024, China.
Abstract:
High-responsivity photodevices are strongly desired for various demanding applications, such as optical communications, logic circuits, and sensors. The use of quantum and photon confinement has enabled a true revolution in the development of high-performance devices. Unfortunately, many practical optoelectronic devices exhibit intermediate sizes where resonant enhancement effects seem to be insignificant. Here we design and fabricate an ultra-high-responsivity organic-light-emitting-diode-induced nanowire resonance phototransistor (ONRPT) based on standing-wave resonance in the nanoscale cavity, subjected to a near-field light. Observations of the ONRPT in standing-wave resonance mode indicate a >104 enhancement in the on/off ratio and a six times higher subthreshold slope when compared with the ONRPT in non-resonance mode. The ONRPT, which leads itself to outstanding electrical and favorably stable performance, opens up a plethora of opportunities for high-efficiency energy devices and allows for nanowire applications in the solar cell, piezo-photonic detectors, and optical modulators.
