Precise control of the interlayer twist angle in large scale MoS₂ homostructures

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Two-dimensional (2D) layered materials offer unique properties influenced by interlayer twist angles, a field known as twistronics.
• Precise control over these twist angles on large scales is crucial for realizing practical twistronic applications.

Purpose of the Study:

• To achieve precise control of the interlayer twist angle in centimeter-scale stacked multilayer molybdenum disulfide (MoS2) homostructures.
• To investigate the impact of controlled twist angles on the electronic and optical properties of MoS2.

Main Methods:

• Employed wafer-scale, highly-oriented monolayer MoS2 growth techniques.
• Utilized a water-assisted transfer method for stacking MoS2 layers.
• Analyzed photoluminescence peak shifts to confirm bandgap changes and electrical properties.

Main Results:

• Demonstrated precise control of interlayer twist angles in centimeter-scale MoS2 homostructures.
• Showcased continuous tuning of the indirect bandgap via twist angle, evidenced by photoluminescence shifts.
• Observed that a 30° twist angle in the stack structure enhances electron mobility in MoS2.

Conclusions:

• The study provides a scalable method for controlling twist angles in multilayer MoS2.
• This precise twist angle control enables tunable electronic and optical properties, advancing twistronics.
• The findings lay a foundation for developing novel electronic devices based on twistronics.